Description
Description
The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.
Maximum Ratings
Peak Repetive Reverse Voltage (VRRM) | 600V |
Working Peek Reverse Voltage (VRWM) | 600V |
DC Blocking Voltage (VR) | 600V |
Non-Repetitive Peak Reverse Voltage(Halfwave, Single Phase, 60Hz) (VRSM) | 720V |
RMS Reverse Voltage (VR(RMS)) | 420V |
Average Rectified Forward Current (IO) Single Phase, Resistive Load, 60Hz, TA = +75° | 1A |
Non-Repetitive Peak Surge Current (IFSM) (Surge Applied at rated load conditions for 1 cycle | 30A |
Operating Junction Temperature Range (TJ) | -65°C to +175°C |
Storage Temperature Range (TSTG) | -65°C to +175°C |
Maximum Lead Temperature (TL) (During soldering, 3/8" from case for 10sec at 5lbs tension | +350°C |
Electrical Characteristcs
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
Maximum Instantaneous Forward Voltage Drop | VF | iF = 1A, TJ = +25°C | - | 0.93 | 1.1 | V |
Maximum Full-Cycle Average Forward Voltage Drop | VF(AV) | IO = 1A, TL +75°C, 1" Leads | - | - | 0.8 | V |
Maximum Reverse Current | IR | VRRM = 600V, TJ = +25°C | - | 0.05 | 10 | µA |
IR | VRRM = 600V, TJ = + 100°C | - | 1.0 | 50 | µA | |
Maximum Full-Cycle Average Reverse Current | IR(AV) | IO = 1A, TL = +75°C, 1" Leads | - | - | 30 | µA |